ultra red led chip ultra bright gaas/algain p 1. material substrate gaas (n type) epitaxial layer algainp (p/n type) 2. electrode n(cathode) side gold alloy p(anode) side gold alloy 3. electro-optical parameter min typ max unit condition characteristics f orward voltag e 2.1 2.4 v if=20ma reverse curren t 100 ua vr=5v b 90 120 c 110 140 d 130 160 e 140 180 f 140 200 620 nm if=20ma 20 nm if=20ma note : luminous intensity is measured on bare chips. 4. mechanical data (a) emission area -------------------------- 11mil x 11mil (b) bottom area -------------------------- 12mil x 12mil (c) bonding pad -------------------------- 100um (d) chip thickness -------------------------- 7mil p side electrode n side electrode eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr wavelength auk corp. ? d brightness if=20ma mcd OPA6330URO i r v f symbol i v (c) (a) (b) (d) algainp epi substrate
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